View SKB06N60HS_5000950.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SKB06N60HS
High Speed IGBT in NPT-technology
C
* 30% lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for operation above 30 kHz * NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution * * * * High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 6A Eoff 80J Tj 150C Marking K06N60HS Package PG-TO-263-3-2
PG-TO-263-3-2
G
E
Type SKB06N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C
Symbol VCE IC
Value 600 12 6
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature (reflow soldering, MSL1)
2)
ICpul s IF
24 24
12 6 IFpul s VGE tSC Ptot Tj , Tstg Tj(tl) 24 20 30 10 68 -55...+150 175 245 V s W C
VGE = 15V, VCC 400V, Tj 150C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
Symbol RthJC RthJCD RthJA RthJA
Conditions
Max. Value 1.85 4.5 62 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 6 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 6 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 20 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 Typ. 2.8 3.5 1.5 3 1.55 4 4 max. 3.15 4.00 2.05 2.05 5
Unit
V
A 40 2000 100 nA S
IGES gfs
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 6 A
Ciss Coss Crss QGate LE IC(SC)
V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =6 A V G E = 15 V
-
350 50 23 33 7 48
pF
nC nH A
V G E = 15 V ,t S C 10 s V C C 4 0 0 V, T j 1 5 0 C
2
-
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
Power Semiconductors
2
Rev. 2.3
Oct.07
SKB06N60HS
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 C , V R = 4 00 V , I F = 6 A, d i F / d t =6 2 6 A/ s 100 24 76 220 7 315 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 50 2) L = 60 n H, 2) C = 40 pF Energy losses include "tail" and diode reverse recovery. 11 11 196 41 0.10 0.09 0.19 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , RG= 8 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. T j =1 5 0 C V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 5 0 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. 8 3 63 59 0.11 0.08 0.19 10 13 216 29 0.15 0.12 0.27 mJ ns mJ ns Symbol Conditions Value min. typ. max. Unit
2) 1)
Leakage inductance L a nd Stray capacity C due to test circuit in Figure E. Leakage inductance L a nd Stray capacity C due to test circuit in Figure E. 3 Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 C V R = 4 00 V , I F = 6 A, d i F / d t =6 7 3 A/ s 150 27 123 500 8.8 280 nC A A/s ns
Power Semiconductors
4
Rev. 2.3
Oct.07
SKB06N60HS
tP=4s 10A 8s 15s
IC, COLLECTOR CURRENT
20A
IC, COLLECTOR CURRENT
TC=80C
50s 1A 200s 1ms
TC=110C 10A
Ic
Ic
0A 10Hz
100Hz
1kHz
10kHz
100kHz
0,1A 1V
DC 10V 100V 1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 50)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V)
10A
40W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
60W
5A
20W
0W 25C
50C
75C
100C
125C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
5
Rev. 2.3
Oct.07
SKB06N60HS
15A
VGE=20V 15V
15A
VGE=20V 15V
IC, COLLECTOR CURRENT
13V 11V 10A 9V 7V 5V 5A
IC, COLLECTOR CURRENT
13V 11V 10A 9V 7V 5V 5A
0A 0V 2V 4V 6V
0A 0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
T J=150C 15A 25C -55C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C 150C IC=6A IC=12A
IC, COLLECTOR CURRENT
10A
5A
IC=3A
0A
0V
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev. 2.3
Oct.07
SKB06N60HS
td(off) tf 100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
100 ns
td(off) tf
10ns
td(on)
10 ns
td(on)
tr
tr
1ns
0A
5A
10A
1 ns
0
50
100
150
200
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=50, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=6A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
5,0V 4,5V max. 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V -50C min. typ.
t, SWITCHING TIMES
100ns
tf
10ns
td(on) 0C
tr 50C 100C 150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=6A, RG=50, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.5mA)
Power Semiconductors
7
Rev. 2.3
Oct.07
SKB06N60HS
*) Eon include losses due to diode recovery 0,5mJ
Ets*
0,6 mJ
*) Eon include losses due to diode recovery
Ets*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0,4mJ
0,5 mJ 0,4 mJ Eon* 0,3 mJ 0,2 mJ 0,1 mJ 0,0 mJ Eoff
0,3mJ
Eon*
0,2mJ
Eoff
0,1mJ
0,0mJ 0,0A
2,5A
5,0A
7,5A
10,0A
0
50
100
150
200
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=50, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=6A, Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
*) Eon include losses due to diode recovery
0 K /W 0.2 0 .1 0 K /W 0 .0 2
-1
0
D = 0 .5
E, SWITCHING ENERGY LOSSES
0,2mJ
Ets*
0 .0 5
R,(K/W) 0.705 0.561 0.583
R1
Eon* 0,1mJ Eoff
, (s) 0.0341 3.74E-3 3.25E-4
R2
0 K /W
-2
0.01
sing le p u lse 0 K /W 1 s
-3
C 1 = 1 / R 1 C 2 = 2 /R 2
0,0mJ 0C
50C
100C
150C
1 0 s 1 0 0 s
1m s
10 m s 1 00 m s
1s
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=6A, RG=50, Dynamic test circuit in Figure E)
tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T)
Power Semiconductors
8
Rev. 2.3
Oct.07
SKB06N60HS
VGE, GATE-EMITTER VOLTAGE
15V
Ciss
120V 10V
480V
c, CAPACITANCE
100pF
5V
Coss
Crss
0V 0nC 10nC 20nC 30nC 40nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=6 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
10V 11V 12V 13V 14V
tSC, SHORT CIRCUIT WITHSTAND TIME
70A 60A 50A 40A 30A 20A 10A 0A
15s
10s
5s
0s
10V
12V
14V
16V
18V
VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
Power Semiconductors
9
Rev. 2.3
Oct.07
SKB06N60HS
300ns
Qrr, REVERSE RECOVERY CHARGE
IF=12A
0,50C
trr, REVERSE RECOVERY TIME
200ns
IF=12A IF=6A
IF=6A
100ns
IF=3A
0,25C
IF=3A
0ns 200A/s
400A/s
600A/s
800A/s
0,00C 200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
-400A/s
10,0A
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
800A/s
Irr, REVERSE RECOVERY CURRENT
-300A/s
IF=3A
7,5A
IF=12A IF=6A
-200A/s
5,0A
-100A/s
2,5A 200A/s 400A/s 600A/s
-0A/s 200A/s 400A/s 600A/s 800A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev. 2.3
Oct.07
SKB06N60HS
TJ=-55C 25C 10A 150C
2,0V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
8A
1,8V
IF12A
6A
1,6V IF=6A
4A
1,4V
2A
1,2V
IF=3A
0A
0,0V
0,5V
1,0V
1,5V
-50C
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5 0 K/W 0.2 0.1 0.05 0.02 0 K/W 0.01 single pulse
-1 0
R,(K/W) 0.523 0.550 0.835 1.592
R1
, (s) 7.25*10-2 6.44*10-3 7.13*10-4 7.16*10-5
R2
C 1= 1/R 1
C 2 = 2 /R 2
0 K/W 1s
-2
tP, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D=tP/T)
10s
100s
1ms
10ms
100ms
1s
Power Semiconductors
11
Rev. 2.3
Oct.07
SKB06N60HS
PG-TO-263-3-2
Power Semiconductors
12
Rev. 2.3
Oct.07
SKB06N60HS
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =60nH an d Stray capacity C =40pF.
Published by
Power Semiconductors
13
Rev. 2.3
Oct.07
SKB06N60HS
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 11/6/07. All Rights Reserved. Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
14
Rev. 2.3
Oct.07

▲Up To Search▲

Price & Availability of SKB06N60HS

	To Download SKB06N60HS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .